PART |
Description |
Maker |
2N4936 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39
|
New Jersey Semiconductors
|
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A) Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.18ohm,身份证\u003d 9.8A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A 200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
SUP15P01-52 SUB15P01-52 |
Trans MOSFET P-CH 8V 15A 3-Pin(3 Tab) TO-220AB Trans MOSFET P-CH 8V 15A 3-Pin(2 Tab) TO-263
|
Vishay Siliconix
|
G8338-02 G7871 G7871-02 G8795-02 G8338 G8341 G8341 |
TRANS PREBIASED PNP 150MW SOT523 Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 200V; Case Size: 25x25 mm; Packaging: Bulk InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|